Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
Identifieur interne : 000284 ( Main/Exploration ); précédent : 000283; suivant : 000285Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
Auteurs : RBID : pubmed:24115285Abstract
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
DOI: 10.1002/adma.201302312
PubMed: 24115285
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.</title><author><name sortKey="Hong, Young Joon" uniqKey="Hong Y">Young Joon Hong</name><affiliation wicri:level="1"><nlm:affiliation>Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628</wicri:regionArea></affiliation></author><author><name sortKey="Yang, Jae Won" uniqKey="Yang J">Jae Won Yang</name></author><author><name sortKey="Lee, Wi Hyoung" uniqKey="Lee W">Wi Hyoung Lee</name></author><author><name sortKey="Ruoff, Rodney S" uniqKey="Ruoff R">Rodney S Ruoff</name></author><author><name sortKey="Kim, Kwang S" uniqKey="Kim K">Kwang S Kim</name></author><author><name sortKey="Fukui, Takashi" uniqKey="Fukui T">Takashi Fukui</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="RBID">pubmed:24115285</idno><idno type="pmid">24115285</idno><idno type="doi">10.1002/adma.201302312</idno><idno type="wicri:Area/Main/Corpus">000372</idno><idno type="wicri:Area/Main/Curation">000372</idno><idno type="wicri:Area/Main/Exploration">000284</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24115285</PMID><DateCreated><Year>2013</Year><Month>12</Month><Day>11</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1521-4095</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>47</Issue><PubDate><Year>2013</Year><Month>Dec</Month><Day>17</Day></PubDate></JournalIssue><Title>Advanced materials (Deerfield Beach, Fla.)</Title><ISOAbbreviation>Adv. Mater. Weinheim</ISOAbbreviation></Journal><ArticleTitle>Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.</ArticleTitle><Pagination><MedlinePgn>6847-53</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1002/adma.201302312</ELocationID><Abstract><AbstractText>Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.</AbstractText><CopyrightInformation>© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Hong</LastName><ForeName>Young Joon</ForeName><Initials>YJ</Initials><Affiliation>Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan.</Affiliation></Author><Author ValidYN="Y"><LastName>Yang</LastName><ForeName>Jae Won</ForeName><Initials>JW</Initials></Author><Author ValidYN="Y"><LastName>Lee</LastName><ForeName>Wi Hyoung</ForeName><Initials>WH</Initials></Author><Author ValidYN="Y"><LastName>Ruoff</LastName><ForeName>Rodney S</ForeName><Initials>RS</Initials></Author><Author ValidYN="Y"><LastName>Kim</LastName><ForeName>Kwang S</ForeName><Initials>KS</Initials></Author><Author ValidYN="Y"><LastName>Fukui</LastName><ForeName>Takashi</ForeName><Initials>T</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>09</Month><Day>25</Day></ArticleDate></Article><MedlineJournalInfo><Country>Germany</Country><MedlineTA>Adv Mater</MedlineTA><NlmUniqueID>9885358</NlmUniqueID><ISSNLinking>0935-9648</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">double heterostructures</Keyword><Keyword MajorTopicYN="N">graphene</Keyword><Keyword MajorTopicYN="N">indium arsenide</Keyword><Keyword MajorTopicYN="N">metal-organic vapor-phase epitaxy</Keyword><Keyword MajorTopicYN="N">van der Waals epitaxy</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>5</Month><Day>21</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2013</Year><Month>6</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>9</Month><Day>25</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>10</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>10</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>10</Month><Day>12</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">24115285</ArticleId><ArticleId IdType="doi">10.1002/adma.201302312</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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